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DISCRETE SEMICONDUCTORS
DATA SHEET
alfpage
M3D034
RZ1214B65Y NPN microwave power transistor
Product specification Supersedes data of 1997 Feb 18 1999 Dec 24
Philips Semiconductors
Product specification
NPN microwave power transistor
FEATURES * Interdigitated structure provides high emitter efficiency * Diffused emitter ballasting resistor providing excellent current sharing and withstanding a high VSWR * Gold metallization realizes very stable characteristics and excellent lifetime * Multicell geometry gives good balance of dissipated power and low thermal resistance * Internal input and output matching ensures good stability and allows an easier design of wideband circuits. APPLICATIONS * Intended for use in common base class C wideband pulsed power amplifiers for L-band radar applications in the 1.2 to 1.4 GHz band.
Top view 3
handbook, halfpage
RZ1214B65Y
PINNING - SOT443A PIN 1 2 3 collector emitter base connected to flange DESCRIPTION
1
c b e
2
MAM314
DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT443A metal ceramic flange package with the base connected to the flange. Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA Microwave performance up to Tmb = 25 C in a common base class-C wideband amplifier. MODE OF OPERATION Class-C; tp = 150 s; = 5% f (GHz) 1.2 to 1.4 VCC (V) 50 WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. PL (W) 70 Gp (dB) 7 C (%) 35 Zi; ZL () see Fig 4
1999 Dec 24
2
Philips Semiconductors
Product specification
NPN microwave power transistor
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VCES VEBO IC Ptot Tstg Tj Tsld PARAMETER collector-base voltage collector-emitter voltage collector-emitter voltage emitter-base voltage collector current (DC) total power dissipation storage temperature operating junction temperature soldering temperature at 0.2 mm from the case; t 10 s CONDITIONS open emitter open base RBE = 0 open collector tp 150 s; 5% Tmb 75 C; tp 150 s; 5% - - - - - - -65 - - MIN.
RZ1214B65Y
MAX. 65 15 60 3 6 225 +200 200 235 V V V V A W
UNIT
C C C
handbook,
250 Ptot (W) 200
MGD977
150
100
50
0 0 50 100 150 200 Tmb (C)
tp = 150 s; = 5%.
Fig.2
Power derating curve.
1999 Dec 24
3
Philips Semiconductors
Product specification
NPN microwave power transistor
THERMAL CHARACTERISTICS Tj = 75 C unless otherwise specified. SYMBOL Rth j-mb Rth mb-h Zth j-h Notes 1. See "Mounting recommendations in the General part of associated Handbook". 2. Equivalent thermal impedance under pulsed microwave operating conditions. CHARACTERISTICS Tmb = 25 C unless otherwise specified. SYMBOL V(BR)CBO V(BR)CES ICBO IEBO PARAMETER collector-base breakdown voltage collector-emitter breakdown voltage collector cut-off current emitter cut-off current CONDITIONS IC = 40 mA; IE = 0 IC = 40 mA; RBE = 0 VCB = 50 V; IE = 0 VEB = 1.5 V; IC = 0 65 60 - - MIN. PARAMETER thermal resistance from junction to mounting-base thermal resistance from mounting-base to heatsink thermal resistance from junction to heatsink note 1 tp = 100 s; = 10 %; notes 1 and 2 CONDITIONS
RZ1214B65Y
MAX. 2.5 0.2 0.55
UNIT K/W K/W K/W
MAX. - - 4 0.4 V V
UNIT
mA mA
APPLICATION INFORMATION The transistors are 100% tested under the following conditions. MODE OF OPERATION Class-C CONDITIONS tp = 150 s; = 5% f (GHz) 1.2 to 1,4 VCC (V) 50 50 PL (W) typ.80; >70 typ.80; Gp (dB) typ.7.8; >7 typ.7 C (%) typ.40; >35 typ.30 Zi; ZL () see Fig 4 see Fig 4
tp = 300 s; = 10% 1.2 to 1,4
1999 Dec 24
4
Philips Semiconductors
Product specification
NPN microwave power transistor
RZ1214B65Y
handbook, full pagewidth
input
,,,,,, ,,,,,,,,,,,,,, ,,,,,,,,,,,,,, ,,,,,,, ,,,,,, ,,,,,,
15 6.5 5.7 0.65 3 2.3 0.65 5.3 3 3.5 5 3 5 8.5 4.8 4
output
MGK060
Dimensions in mm. Substrate: Epsilam. Thickness: 0.635 mm. Permittivity: r = 10.
Fig.3 Wideband test circuit for class-C operation at 1.2 to 1.4 GHz.
1
handbook, full pagewidth
0.5
2
0.2
5 10
+j 0 -j 0.2 0.5 1.4 1.3 1.4 0.2 1 zi 1.3 1.2 GHz ZL 5 2 1.2 GHz 5 10
10
0.5 1 Class-C operation; VCE = 50 V; PL = 65 W; Zo = 5 ; tp = 150 s; = 5%.
2
MBC985
Fig.4 Input and optimum load impedances as functions of frequency; typical values.
1999 Dec 24
5
Philips Semiconductors
Product specification
NPN microwave power transistor
PACKAGE OUTLINE Flanged hermetic ceramic package; 2 mounting holes; 2 leads
RZ1214B65Y
SOT443A
D
A F
3
D1 U1 q C B c
1
L
U2
E1
E
A L
p
w1 M A M B M
2
b
w2 M C M
Q
0
5 scale
10 mm
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm inches A 6.32 4.90 b 3.20 2.90 c 0.15 0.09 D D1 E 8.15 7.85 E1 10.21 9.91 F 1.60 1.40 L 6.25 5.75 p 3.40 3.20 Q 3.66 2.84 q 16.50 0.650 U1 23.10 22.70 0.909 0.894 U2 9.90 9.70 w1 0.41 w2 0.94
10.00 10.21 9.70 9.91
0.249 0.126 0.006 0.193 0.114 0.004
0.394 0.402 0.321 0.402 0.063 0.382 0.390 0.309 0.390 0.055
0.246 0.134 0.144 0.226 0.126 0.112
0.390 0.016 0.037 0.382
OUTLINE VERSION SOT443A
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 99-03-29
1999 Dec 24
6
Philips Semiconductors
Product specification
NPN microwave power transistor
DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Limiting values
RZ1214B65Y
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
1999 Dec 24
7
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For all other countries apply to: Philips Semiconductors, International Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 (c) Philips Electronics N.V. 1999
Internet: http://www.semiconductors.philips.com
SCA 68
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
125002/03/pp8
Date of release: 1999
Dec 24
Document order number:
9397 750 06656

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